Ab-initio simulation of self-interstitial in germanium

被引:17
|
作者
Spiewak, P. [1 ,2 ]
Vanhellemont, J. [3 ]
Sueoka, K. [4 ]
Kurzydlowski, K. J. [1 ]
Romandic, I. [5 ]
机构
[1] Warsaw Univ Technol, Fac Mat Sci & Engn, Mat Design Div, PL-02507 Warsaw, Poland
[2] Umicore, PL-01226 Warsaw, Poland
[3] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium
[4] Okayama Prefectural Univ, Dept Syst Engn, Okayama 7191197, Japan
[5] Umicore EOM, B-2250 Olen, Belgium
关键词
Germanium; Point defects; Diffusion; Ab-initio;
D O I
10.1016/j.mssp.2008.09.002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Density functional theory (DFT) with local density approximation including on-site Coulomb interaction (LDA+U) has been used to calculate the formation energy of the neutral and charged self-interstitial in germanium as a function of the Fermi level. The calculations suggest that the self-interstitial in germanium can exist in four different charge states: 1-, and 0 for the < 110 > split interstitial, 0,1+, and 2+ for the tetrahedral position. The < 110 > split interstitial acts as an acceptor, while the tetrahedral self-interstitial acts as a double donor. Allowing structural changes of the self-interstitial with the charge state, the existence of a "two-state defect" in low-temperature irradiated p-type Ge can be explained. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:328 / 331
页数:4
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