Hot-carrier reliability in deep-submicrometer LATID NMOSFETs

The hot-carrier degradation of large angle tilt implanted drain (LATID) NMOSFETs of a 0.35 mu m CMOS technology is analysed and compared to the degradation behaviour of standard LDD devices. LATID NMOSFETs are found to exhibit a significant improvement in terms of both, current drivability and hot-carrier immunity. By means of I-V characterisation and charge pumping measurements, the different factors which can be responsible for this improved hot-carrier resistance are investigated. It is shown that this must be attributed to a reduction of the maximum lateral. electric field along the channel, but not to a minor generation of physical damage for a given electric field or to a reduced I-V susceptibility to a given amount of generated damage. (C) 2000 Elsevier Science Ltd. All rights reserved.