Ohmic contacts to n-type polycrystalline SiC for high-temperature micromechanical applications

被引：15

作者：

Kriz, J ^{[1
]}

Gottfried, K ^{[1
]}

Scholz, T ^{[1
]}

Kaufmann, C ^{[1
]}

Gessner, T ^{[1
]}

机构：

[1] ANGEW FESTKORPERANALYT GMBH,INST FRESENIUS,D-01109 DRESDEN,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 46卷 / 1-3期

关键词：

atomic force microscopy; micromechanical applications; polycrystalline;

D O I：

10.1016/S0921-5107(96)01959-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly doped n-type polycrystalline 3C-SiC films were examined for further use in high-temperature applications. The specific contact resistance of TiW contacts was determined using the circular transmission line method by Marlow and Das. The TiW-SiC interface was investigated by means of auger electron spectroscopy (AES) depth-profiles and atomic force microscopy (AFM) surface scans. In addition n-type 6H-SiC was used for reference purposes. It was found that these polycrystalline films were extremely rough (up to 70 nm) and therefore have a wide metal SiC interface, so that no certain statement about interface reaction could be made. The reference samples showed no interface reaction. TiW shows a good ohmic contact behaviour with a specific contact resistance of rho(C) = 7.8 x 10(-5) Omega cm(2) to polycrystalline 3C-SiC and with a rho(C) = 3.4 x 10(-4) Omega cm(2) to 6H-SiC. (C) 1997 Elsevier Science S.A.

引用

页码：180 / 185

页数：6

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