Novel planar electrode structure for high-speed (>40 GHz) electroabsorption modulators

被引：3
|
作者：
Wang, Jian [1 ]
Xiong, Bing [1 ]
Cai, Peng-Fei [1 ]
Tian, Jian-Bo [1 ]
Sun, Chang-Zheng [1 ]
Luo, Yi [1 ]
机构：
[1] Tsing Hua Univ, Dept Elect Engn, State Key Lab Integrated Optoelect, Beijing 100084, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 42-45期
关键词：
electroabsorption modulators; inductively coupled plasma; dry etching;
D O I：
10.1143/JJAP.45.L1209
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A novel planar electrode structure has been developed for the fabrication of high-speed electroabsorption (EA) modulators. To reduce the modulator capacitance, a narrow high-mesa waveguide is fabricated by inductively coupled plasma (ICP) dry etching technique. A planarized electrode is then formed by inserting a thick SiO2 insulation mesa beneath the bonding pad, and photo-sensitive polymer is adopted to fill the trench between the ridge and the SiO2 mesa. The planarization procedure is carried out in a self-aligned way. The capacitance of fabricated EA modulators is estimated to be 0.12pF, and a modulation bandwidth over 40 GHz has been demonstrated.
引用
收藏
页码：L1209 / L1211
页数：3
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