Isotope effects on the dissociation of a hydrogen-carbon complex in silicon

被引：4

作者：

Kamiura, Y ^{[1
]}

Fukuda, K ^{[1
]}

Ohyama, S ^{[1
]}

Yamashita, Y ^{[1
]}

机构：

[1] Okayama Univ, Fac Engn, Okayama 7008530, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 3A期

关键词：

defect; hydrogen; carbon; Si; dissociation; DLTS;

D O I：

10.1143/JJAP.39.1098

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have found, by deep-level transient spectroscopy (DLTS), that the dissociation rate of a deuterium-carbon complex in silicon is about half that of a hydrogen-carbon complex, while the activation energies for the dissociation of both the complexes are the same. This clearly proves that both the complexes have the same atomic configuration and their dissociation is governed by the atomic jump of hydrogen (deuterium).

引用

页码：1098 / 1099

页数：2

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