Barrier-free direct-contact-via (DCV) structures for copper interconnects

被引：5
|
作者：
Li, CY
Zhang, DH
Wu, JJ
Qi, DX
Su, SS
Qian, Y
Chow, YF
Koh, LT
Foo, PD
机构：
[1] Inst Microelect, Deep Submicron Circuit, Singapore 117685, Singapore
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[3] Chartered Semicond Mfg Ltd, Singapore 738406, Singapore
来源：
ELECTRONICS LETTERS | 2002年 / 38卷 / 18期
关键词：
Electric breakdown - Interconnection networks - Plasma etching - Silicon wafers;
D O I：
10.1049/el:20020697
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
New barrier-free direct-contact-via (DCV) structures applicable to 0.18 mum integrated circuits have been developed based on step coverage of the Ta barrier and time-controlled plasma etching. The via resistance in the novel DCV structures could be reduced to 29%, while the breakdown voltage in the novel DCV structures can be enhanced to 150%.
引用
收藏
页码：1026 / 1028
页数：3
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