Ion sources for high and low energy extremes of ion implantation

被引:0
|
作者
Hershcovitch, A. [1 ]
Batalin, V. A. [2 ]
Bugaev, A. S. [3 ]
Gushenets, V. I. [3 ]
Johnson, B. M. [1 ]
Kolomiets, A. A. [2 ]
Kropachev, G. N. [2 ]
Kuibeda, R. P. [2 ]
Kulevoy, T. V. [2 ]
Litovko, I. V. [3 ]
Masunov, E. S. [4 ]
Oks, E. M. [3 ]
Pershin, V. I. [2 ]
Petrenko, S. V. [2 ]
Polozov, S. M. [4 ]
Poole, H. J. [5 ]
Rudskoy, I. [2 ]
Seleznev, D. N. [2 ]
Storozhenko, P. A. [6 ]
Svarovski, A. Ya. [7 ]
Yushkov, G. Yu. [3 ]
机构
[1] Brookhaven Natl Lab, Upton, NY 11973 USA
[2] Inst Theoret & Expt Phys, Moscow, Russia
[3] Russian Acad Sci, Inst High Current Elect, Tomsk R-634055, Russia
[4] Moscow Engn Phys Inst, Moscow R-115409, Russia
[5] PVI, Oxnard, CA 93031 USA
[6] State Res Inst Chem & Technol Organoelement, Moscow R-111123, Russia
[7] AA Bochvara Scientif Res Inst Inorgan Mat, Russian Natl Res Ctr, Siberian Div, Seversk R-636070, Russia
来源
ION IMPLANTATION TECHNOLOGY | 2006年 / 866卷
关键词
ion sources for ion implantation;
D O I
暂无
中图分类号
O59 [应用物理学];
学科分类号
摘要
A joint research and development effort focusing on the design of steady state, intense ion sources has been in progress for the past two and a half years. Our ultimate goal is to meet the two, energy extreme range needs of megaelectron-volt and 100's of electron-volt ion implanters. This endeavor has already resulted in record steady state output currents of higher charge state Antimony and Phosphorous ions: P2+ (8.6 pmA), P3+ (1.9 pnLA), and P4+ (0.12 pmA) and 4+ 16.2, 7.6, 3.3, and 2.2 pmA of Sb3+ Sb4+, Sb5+, and Sb6+ respectively. For low energy ion implantation our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA of positive Decaborane ions were extracted at 10 keV and a somewhat smaller current of negative Decaborane ions were also extracted. Initial results also indicate that a Boron fraction of over 70% was extracted from a Bemas-Calutron ion source.
引用
收藏
页码:369 / +
页数:2
相关论文
共 50 条
  • [31] FABRICATION OF HIGH QUALITY SILICON JUNCTION DETECTORS BY LOW ENERGY ION IMPLANTATION
    KALBITZER, S
    BADER, R
    HERZER, H
    BETHGE, K
    ZEITSCHRIFT FUR PHYSIK, 1967, 203 (01): : 117 - +
  • [32] Special Aspects of High-Intensity Low-Energy Ion Implantation
    Ryabchikov, A. I.
    Ivanova, A. I.
    Korneva, O. S.
    Sivin, D. O.
    RUSSIAN PHYSICS JOURNAL, 2021, 63 (10) : 1810 - 1819
  • [33] A new era for high-current, low-energy ion implantation
    Parrill, TM
    Ameen, MS
    Graf, M
    Mazzola, R
    SOLID STATE TECHNOLOGY, 2000, 43 (11) : 103 - +
  • [34] Temperature gradients in targets at low energy high-intensity ion implantation
    Ryabchikov, A., I
    Ananin, P. S.
    Bleykher, G. A.
    Ivanova, A. I.
    Koval, T., V
    Modebadze, G. S.
    SURFACE & COATINGS TECHNOLOGY, 2020, 389
  • [35] Special Aspects of High-Intensity Low-Energy Ion Implantation
    A. I. Ryabchikov
    A. I. Ivanova
    O. S. Korneva
    D. O. Sivin
    Russian Physics Journal, 2021, 63 : 1810 - 1819
  • [36] NEGATIVE-ION SOURCES FOR ION-IMPLANTATION
    HOLMES, AJT
    PROUDFOOT, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4): : 323 - 327
  • [37] Highly stripped ion sources for MeV ion implantation
    Batalin, VA
    Bugaev, AS
    Gushenets, VI
    Hershcovitch, A
    Johnson, BM
    Kolomiets, AA
    Kuibeda, RP
    Kondratiev, BK
    Kulevoy, TV
    Litovko, IV
    Oks, EM
    Pershin, VI
    Poole, HJ
    Petrenko, SV
    Seleznev, DN
    Svarovski, AY
    Turchin, VI
    Yushkov, GY
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2004, 75 (05): : 1900 - 1903
  • [38] Enabling concepts for low-energy ion implantation
    Graf, M
    SOLID STATE TECHNOLOGY, 2005, 48 (04) : 24 - +
  • [39] Studies of low-energy ion implantation in silicon
    Wang, TS
    Cullis, AG
    Collart, EJH
    Murrell, AJ
    Foad, MA
    Van den Berg, JA
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS, 1999, (164): : 459 - 464
  • [40] Investigation of Low Energy Nitrogen Ion Implantation into Gold
    Yang, Jianhua
    ADVANCED BUILDING MATERIALS AND STRUCTURAL ENGINEERING, 2012, 461 : 840 - 843