Ion sources for high and low energy extremes of ion implantation

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作者
Hershcovitch, A. [1 ]
Batalin, V. A. [2 ]
Bugaev, A. S. [3 ]
Gushenets, V. I. [3 ]
Johnson, B. M. [1 ]
Kolomiets, A. A. [2 ]
Kropachev, G. N. [2 ]
Kuibeda, R. P. [2 ]
Kulevoy, T. V. [2 ]
Litovko, I. V. [3 ]
Masunov, E. S. [4 ]
Oks, E. M. [3 ]
Pershin, V. I. [2 ]
Petrenko, S. V. [2 ]
Polozov, S. M. [4 ]
Poole, H. J. [5 ]
Rudskoy, I. [2 ]
Seleznev, D. N. [2 ]
Storozhenko, P. A. [6 ]
Svarovski, A. Ya. [7 ]
Yushkov, G. Yu. [3 ]
机构
[1] Brookhaven Natl Lab, Upton, NY 11973 USA
[2] Inst Theoret & Expt Phys, Moscow, Russia
[3] Russian Acad Sci, Inst High Current Elect, Tomsk R-634055, Russia
[4] Moscow Engn Phys Inst, Moscow R-115409, Russia
[5] PVI, Oxnard, CA 93031 USA
[6] State Res Inst Chem & Technol Organoelement, Moscow R-111123, Russia
[7] AA Bochvara Scientif Res Inst Inorgan Mat, Russian Natl Res Ctr, Siberian Div, Seversk R-636070, Russia
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ion sources for ion implantation;
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中图分类号
O59 [应用物理学];
学科分类号
摘要
A joint research and development effort focusing on the design of steady state, intense ion sources has been in progress for the past two and a half years. Our ultimate goal is to meet the two, energy extreme range needs of megaelectron-volt and 100's of electron-volt ion implanters. This endeavor has already resulted in record steady state output currents of higher charge state Antimony and Phosphorous ions: P2+ (8.6 pmA), P3+ (1.9 pnLA), and P4+ (0.12 pmA) and 4+ 16.2, 7.6, 3.3, and 2.2 pmA of Sb3+ Sb4+, Sb5+, and Sb6+ respectively. For low energy ion implantation our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA of positive Decaborane ions were extracted at 10 keV and a somewhat smaller current of negative Decaborane ions were also extracted. Initial results also indicate that a Boron fraction of over 70% was extracted from a Bemas-Calutron ion source.
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页码:369 / +
页数:2
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