Electronic structure of silica glass under strong electric field

被引：0

作者：

Makino, Y

Tanaka, I

Kawamura, K

Adachi, H

Hirao, K

机构：

[1] JST, ERATO, Hirao Act Glass Project, Kyoto 6190237, Japan

[2] Kyoto Univ, Dept Energy Sci & Technol, Kyoto 6068501, Japan

[3] Tokyo Inst Technol, Dept Earth & Planetary Sci, Tokyo 1520033, Japan

[4] Kyoto Univ, Dept Mat Sci & Engn, Kyoto 6068501, Japan

[5] Kyoto Univ, Grad Sch Engn, Dept Chem Mat, Kyoto 6068501, Japan

来源：

PROGRESS OF THEORETICAL PHYSICS SUPPLEMENT | 2000年 / 138期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We tried to apply ab initio calculations on large amorphous structure to investigate the origine of the second harmonics generation from silica glass. We made (Ge doped) (poled) silica glass by molecular dynamics, then we calculated the change of the electronic structures of (Ge doped) (poled) silica glass under the external strong electric field. The changes of these electronic structures such as density of states and electron distribution, were small within our approximal;ion.

引用

页码：239 / 240

页数：2

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