The Correlation Between Trap States and Mechanical Reliability of Amorphous Si:H TFTs for Flexible Electronics

被引：0

作者：

Lee, M. H. ^{[1
]}

Chang, S. T. ^{[2
]}

Weng, S. -C. ^{[1
]}

Liu, W. -H. ^{[1
]}

Chen, K. -J. ^{[1
]}

Ho, K. -Y. ^{[3
]}

Liao, M. H. ^{[4
]}

Huang, J. -J. ^{[3
]}

Hu, G. -R. ^{[3
]}

机构：

[1] Natl Taiwan Normal Univ, Inst Electroopt Sci & Technol, Taipei 116, Taiwan

[2] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 402, Taiwan

[3] Ind Technol Res Inst, Display Technol Ctr, Hsinchu 310, Taiwan

[4] Taiwan Semicond Mfg Co Ltd, Res & Dev, Hsinchu 300, Taiwan

来源：

2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2 | 2009年

关键词：

flexible; a-Si:H; mechanical strain; trap state; SILICON; TRANSISTORS;

D O I：

10.1109/IRPS.2009.5173388

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics such as threshold voltage, subthreshold swing, and mobility of carriers. The weak or broken bonds may contribute to the redistribution of trap states, and lead to unstable electrical characteristics of the a-Si:H TFTs on plastic substrates. We conclude that the DOS of an a-Si:H layer under mechanical strain is the fundamental reliability issue for the development of flexible electronics.

引用

页码：956 / +

页数：2

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