Prerequisites for high-quality magnetic tunnel junctions: XPS and NMR study of Co/Al bilayers

被引：9
|
作者：
de Gronckel, HAM
Kohlstedt, H [1 ]
Daniels, C
机构：
[1] Res Ctr Julich, IFF, D-52425 Julich, Germany
[2] Res Ctr Julich, ISI, D-52425 Julich, Germany
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2000年 / 70卷 / 04期
关键词：
D O I：
10.1007/s003390051063
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Aluminum films with thicknesses ranging from 1 nm to 12 nm have been sputtered on 20 nm thick Co layers. The properties of the Co/Al bilayers were studied by X-ray photoemission spectroscopy (XPS) and spin-echo nuclear magnetic resonance (NMR). Both methods show independently that a 1 nm Al film covers the Co surface completely. XPS and NMR also showed that layers thicker than 1 nm Al are not oxidized completely in ambient air. Similarities to and deviations from niobium with Al overlayers (Nb/Al) are described. Prerequisites for the fabrication of tunneling magnetoresistance devices based on Co or NiFe ferromagnets and an aluminum oxide barrier are discussed.
引用
收藏
页码：435 / 441
页数：7
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