THE DESIGN OF HIGH-PERFORMANCE DOHERTY POWER AMPLIFIER

被引：0
|
作者：
Xiang, Yong-Bo [1 ]
Wang, Guang-Ming [1 ]
机构：
[1] AFEU Univ, Appl Microwave Lab, Xian, Peoples R China
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2010年 / 52卷 / 02期
关键词：
Doherty power amplifier; efficiency; linearity; LDMOS;
D O I：
10.1002/mop.24917
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The article presents a Doherty power amplifier (DPA) with both high efficiency and good linearity for GSM base station using LDMOS transistors. Prepositive delay line structure (PDL) is proposed to satisfy the performances, both higher efficiency and better linearity are achieved. The test results show the proposed DPA reached an efficiency of 43.2% and an IMD3 of -47 dBc at 6 dB back-off power, which is about 19% and 6.5 dBc improvement, respectively than the class AB amplifier, and the improvement is about 4% and 12 dBc. respectively compared with the DPA without PDL structure. (C) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 493-495, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10. 1002/mop.24917
引用
收藏
页码：493 / 495
页数：3
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