Recent Advances in Electronic and Optoelectronic Devices Based on Two-Dimensional Transition Metal Dichalcogenides

被引：81
|
作者：
Ye, Mingxiao [1 ]
Zhang, Dongyan [1 ]
Yap, Yoke Khin [1 ]
机构：
[1] Michigan Technol Univ, Dept Phys, 1400 Townsend Dr, Houghton, MI 49931 USA
来源：
ELECTRONICS | 2017年 / 6卷 / 02期
基金：
美国国家科学基金会;
关键词：
two-dimensional materials; transition metal dichalcogenides; heterostructures; heterojunctions; field effect transistors; photovoltaic cells; light-emitting diodes; photodetectors; lasers; integrated circuits; MoS2; WS2; MoSe2; WSe2; MoTe2; ReS2; ReSe2; FIELD-EFFECT TRANSISTORS; CHEMICAL-VAPOR-DEPOSITION; LIGHT-EMITTING-DIODES; HIGH-PERFORMANCE WSE2; LARGE-AREA SYNTHESIS; LOW-FREQUENCY NOISE; MOS2 ATOMIC LAYERS; FEW-LAYER; MONOLAYER MOS2; ELECTRICAL-PROPERTIES;
D O I：
10.3390/electronics6020043
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Two-dimensional transition metal dichalcogenides (2D TMDCs) offer several attractive features for use in next-generation electronic and optoelectronic devices. Device applications of TMDCs have gained much research interest, and significant advancement has been recorded. In this review, the overall research advancement in electronic and optoelectronic devices based on TMDCs are summarized and discussed. In particular, we focus on evaluating field effect transistors (FETs), photovoltaic cells, light-emitting diodes (LEDs), photodetectors, lasers, and integrated circuits (ICs) using TMDCs.
引用
收藏
页数：40
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