An Analytical Solution to a Double-Gate MOSFET with Doped Body

被引：0
|
作者：
Agarwal, Nitesh
Wakhle, Garima Bandhawakar
机构：
来源：
NANOTECH CONFERENCE & EXPO 2009, VOL 1, TECHNICAL PROCEEDINGS: NANOTECHNOLOGY 2009: FABRICATION, PARTICLES, CHARACTERIZATION, MEMS, ELECTRONICS AND PHOTONICS | 2009年
关键词：
DGMOSFET; Gaussian doping; SCE;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This paper presents a systematic Study of doping effect on symmetric double-gate (DG) MOSFETs. One-dimensional approach have been carried out to investigate the doping effect in Double Gate MOSFET. Complete theoretical analysis has been done for Gaussian doping profile using I-D Possion's equation. A relation has been obtained for electric potential and charge density. The results show that doping reduces the threshold voltage thus the conduction takes place at lower voltage.
引用
收藏
页码：231 / 233
页数：3
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