Photo-ionization spectroscopy of traps in AlGaN/GaN high-electron mobility transistors

被引：7

作者：

Wolter, M ^{[1
]}

Javorka, P

Fox, A

Marso, M

Lüth, H

Kordos, P

Carius, R

Alam, A

Heuken, M

机构：

[1] Forschungszentrum Julich, Res Ctr, Inst Thin Films & Interfaces, D-52425 Julich, Germany

[2] Forschungszentrum Julich, Res Ctr, Inst Photovolta, D-52425 Julich, Germany

[3] AIXTRON AG, D-52072 Aachen, Germany

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2002年 / 31卷 / 12期

关键词：

AlGaN/GaN HEMT; defects; traps; photo-ionization spectroscopy;

D O I：

10.1007/s11664-002-0115-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Four different layer structures are used to study deep-level traps in AlGaN/GaN high-electron mobility transistors (HEMTs) by photo-ionization spectroscopy. The structures grown on sapphire substrates by metal-organic chemical vapor deposition show nearly identical Hall data. However, the direct current (DC) performance of HEMTs with identical geometry is found to differ strongly. In all structures investigated, two distinct defect levels, namely, at 2.84-2.94 eV and 3.24-3.28 eV, were found from the fits of the photo-ionization cross-sectional data. Additionally, different trap concentrations can be deduced. These are in good correlation with the different transconductance and drain current measured. It is assumed that the defect levels observed are related to the AlGaN surface.

引用

页码：1321 / 1324

页数：4

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