Dynamics of the silicon (111) surface phase transition

被引:48
|
作者
Hannon, JB [1 ]
Hibino, H
Bartelt, NC
Swartzentruber, BS
Ogino, T
Kellogg, GL
机构
[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
[2] NTT, Basic Res Labs, Kanagawa 2430198, Japan
[3] Sandia Natl Labs, Livermore, CA 94551 USA
[4] Sandia Natl Labs, Albuquerque, NM 87185 USA
关键词
D O I
10.1038/35014569
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The manner in which phase transformations occur in solids determines important structural and physical properties of many materials. The main problem in characterizing the kinetic processes that occur during phase transformations is the difficulty of observing directly, in real time, the growth of one phase at the expense of another. Here we use low-energy electron microscopy to study the real-time kinetics of a phase transformation confined to the silicon (111) surface. We show that the transformation is governed by the rate at which material is exchanged between the first layer of the crystal and the surface. In bulk phase transformations. the dynamics are usually governed either by the rate of diffusion of material to the phase boundaries or by the structural rearrangement of atoms at the phase boundary(1). The kinetic process that we have identified here has no bulk analogue and leads to domain dynamics that are qualitatively different from these expected for bulk systems.
引用
收藏
页码:552 / 554
页数:3
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