Transfer Technology of Ferroelectric Films onto the Polymer Substrate for the Application of High Density Capacitor

被引：0
|
作者：
Ichiki, Masaaki [1 ,2 ]
Maeda, Ryutaro [3 ]
Suga, Tadatomo [1 ]
机构：
[1] Univ Tokyo, Sch Engn, Dept Precis Engn, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138565, Japan
[2] JST CREST, Tokyo, Japan
[3] Natl Inst Adv Ind Sci & Technol, Adv Mfg Res Inst, Tsukuba, Ibaraki 3058564, Japan
来源：
NEMS/MEMS TECHNOLOGY AND DEVICES | 2009年 / 74卷
关键词：
transfer method; ferroelectrics; capacitor; PZT;
D O I：
10.4028/www.scientific.net/AMR.74.311
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High dielectric capacitors, that has around 1000 in dielectric constant, can be successfully formed by nanotransfer on non-heat-resisting substrates. PZT film could be released from the Si substrate and bonded onto the polymer one. The releasing characteristics have the relationships with the thickness of Pt layer. The formed PZT has perovskite structure and clear columnar texture.
引用
收藏
页码：311 / +
页数：2
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