Reduction of defects caused by chemical mechanical polishing of oxide surfaces and contamination of the wafer bevel

被引：0

作者：

Gallus, Stefan M. ^{[1
]}

Niedermeier, Franz ^{[1
]}

Maue, Marco ^{[1
]}

机构：

[1] Infineon Technol AG, D-93149 Regensburg, Germany

来源：

2009 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE | 2009年

关键词：

CMP; chemical mechanical polishing; slurry particles; defect density reduction; continuous improvement; wafer bevel;

D O I：

10.1109/ASMC.2009.5155942

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In recent years chemical mechanical polishing has become the most relevant planarization technique that is applied for technologies with structures below 0.35 mu m. During the CMP process slurry ingredients like abrasive particles, additives and the polishing pad are continuously in direct contact with the wafer. Therefore CMP is also known as a source of critical defects like microscratches, slurry particles and other surface contaminations on the wafer. This paper describes CMP process and hardware improvements that were implemented in a continuous defect reduction project focussing on oxide CMP processes in the BEOL.

引用

页码：1 / 4

页数：4

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