A New Saw-Like Self-Recovery of Interface States in Nitride-Based Memory Cell

被引：0

作者：

Sung, Yuh-Te ^{[1
]}

Lin, Po-Yen ^{[1
]}

Chen, Jim ^{[2
]}

Chang, Tzong-Sheng ^{[2
]}

King, Ya-Chin ^{[1
]}

Lin, Chrong Jung ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Microelect Lab, Hsinchu 300, Taiwan

[2] Taiwan Semicond Mfg Co, Proc Integrat Div Fab12, Hsinchu 300, Taiwan

来源：

2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2014年

关键词：

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

A new saw-like self-recovery Self-Aligned Nitride (SAN) memory cell is proposed and fabricated in 28nm high-k metal gate (HKMG) CMOS process for high-density logic NVM applications. The cell is operated with Source-Side Injection (SSI) for programming and band-to-band hot holes (BBHH) for erasing. Two effective self-heating recovery mechanisms are proposed and performed to maintain a stable On/Off read window after cycling stresses. Besides, the characteristic and reliability comparison of the SAN cell in other technology nodes, 90nm/45nm/32nm, are characterized to further verify the saw-like self-detrapping and self-recovery operation. The new 28nm HKMG SAN memory cell with the self-detrapping recovery results excellent and superior endurance performance and can provide a very promising solution for logic NVM in advanced technologies.

引用

页数：4

共 14 条

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