Cause of data retention loss in a nitride-based localized trapping storage flash memory cell

被引：54
|
作者：
Tsai, WJ [1 ]
Gu, SH [1 ]
Zous, NK [1 ]
Yeh, CC [1 ]
Liu, CC [1 ]
Chen, CH [1 ]
Wang, TH [1 ]
Pan, S [1 ]
Lu, CY [1 ]
机构：
[1] Macronix Int Co Ltd, Hsinchu, Taiwan
来源：
40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2002年
关键词：
D O I：
10.1109/RELPHY.2002.996607
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Data retention loss in a localized trapping storage flash memory cell with a SONOS type structure is investigated. Both charge loss through the bottom oxide and lateral migration of trapped charges in the nitride layer are considered for the data retention loss. Charge pumping and charge separation methods are used in this study. Our results reveal that in normal operation condition the retention loss is mainly caused by charge leakage via P/E stress created oxide traps.
引用
收藏
页码：34 / 38
页数：5
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