Arsenic cross-contamination in GaSb/InAs superlattices

被引：19
|
作者：
Jackson, EM
Boishin, GI
Aifer, EH
Bennett, BR
Whitman, LJ
机构：
[1] SFA Inc, USN, Res Lab, Largo, MD 20774 USA
[2] USN, Res Lab, Washington, DC 20375 USA
[3] NOVA Res Inc, Alexandria, VA 22308 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2004年 / 270卷 / 3-4期
关键词：
molecular beam epitaxy; superlattices; antimonides; arsenates; semiconducting III-V materials;
D O I：
10.1016/j.jcrysgro.2004.06.033
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have investigated the cross-contamination of As in GaSb/InAs superlattices. We demonstrate a method of varying the lattice constant of the superlattice. By controlling the As background pressure in the growth chamber, the strain can be controlled to about 0.01%, corresponding to As cross-incorporation variations of about +/-1%. The distribution of As is investigated by X-ray diffraction and cross-sectional scanning tunneling microscopy, and the critical thickness is obtained. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：301 / 308
页数：8
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