Numerical Simulation of the Current-Voltage Characteristics of Bilayer Resistive Memory Based on Non-Stoichiometric Metal Oxides

被引：1
|
作者：
Umnyagin, G. M. [1 ]
Degtyarov, V. E. [1 ]
Obolenskiy, S. V. [1 ]
机构：
[1] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia
来源：
SEMICONDUCTORS | 2019年 / 53卷 / 09期
关键词：
resistive memory; non-stoichiometric; numerical simulation;
D O I：
10.1134/S1063782619090252
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The current-voltage characteristics of a resistive-memory structure based on non-stoichiometric tantalum oxides is numerically simulated. The results of pulsed studies of structures with different shapes of the conductive filament, such as a truncated cone with different generatrix inclination angles, are presented. It is shown how the shape and total volume of the conductive filament affects the current amplitude and the number of pulses necessary for complete filament breaking and restoration.
引用
收藏
页码：1246 / 1248
页数：3
相关论文
共 50 条
  • [31] Current-voltage characteristics of metal-oxide-semiconductor devices containing Ge or Si nanocrystals in thin gate oxides
    Beyer, V.
    von Borany, J.
    Klimenkov, M.
    Mueller, T.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (06)
  • [32] Effects of incomplete ionization on forward current-voltage characteristics of p-type diamond Schottky barrier diodes based on numerical simulation
    Seok, Ogyun
    Ha, Min-Woo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 60 (SC)
  • [33] Enhancement of resistive switching performance by introducing a thin non-stoichiometric CeO2-x switching layer in TiO2-based resistive random access memory
    Ismail, Muhammad
    Nisa, Shafqat-Un
    Rana, Anwar Manzoor
    Akbar, Tahira
    Lee, Jinju
    Kim, Sungjun
    APPLIED PHYSICS LETTERS, 2019, 114 (01)
  • [34] Calculation of the Schottky barrier and current-voltage characteristics of metal-alloy structures based on silicon carbide
    Altuhov, V. I.
    Kasyanenko, I. S.
    Sankin, A. V.
    Bilalov, B. A.
    Sigov, A. S.
    SEMICONDUCTORS, 2016, 50 (09) : 1168 - 1172
  • [35] The simulation of current-voltage characteristics and the dynamic conductivity of the ballistic contacts based on superconductors with weak oscillation order parameter
    Sergeyev, Daulet
    Shunkeyev, Kuanyshbek
    2016 INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS (SIBCON), 2016,
  • [36] THE EFFECTS OF SCATTERING ON CURRENT-VOLTAGE CHARACTERISTICS, TRANSIENT-RESPONSE, AND PARTICLE TRAJECTORIES IN THE NUMERICAL-SIMULATION OF RESONANT TUNNELING DIODES
    JENSEN, KL
    BUOT, FA
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (12) : 7602 - 7607
  • [37] The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO2-based resistive random access memory
    Lee, Sangheon
    Lee, Daeseok
    Woo, Jiyong
    Cha, Euijun
    Park, Jaesung
    Moon, Kibong
    Song, Jeonghwan
    Hwang, Hyunsang
    MICROELECTRONIC ENGINEERING, 2015, 147 : 321 - 324
  • [38] Simulation-Based Quantification of Alkali-Metal Evaporation Rate and Systematic Errors From Current-Voltage Characteristics of Langmuir-Taylor Detectors
    Sartori, Emanuele
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2020, 69 (07) : 4975 - 4986
  • [39] Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer
    Mahato, Somnath
    Puigdollers, Joaquim
    PHYSICA B-CONDENSED MATTER, 2018, 530 : 327 - 335
  • [40] Analytical Modeling and Artificial Neural Network (ANN) Simulation of Current-Voltage Characteristics in Graphene Nanoscroll Based Gas Sensors
    Khaledian, M.
    Ismail, Razali
    Akbari, Elnaz
    PLASMONICS, 2015, 10 (06) : 1713 - 1722
12345