Numerical Simulation of the Current-Voltage Characteristics of Bilayer Resistive Memory Based on Non-Stoichiometric Metal Oxides

被引：1
|
作者：
Umnyagin, G. M. [1 ]
Degtyarov, V. E. [1 ]
Obolenskiy, S. V. [1 ]
机构：
[1] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia
来源：
SEMICONDUCTORS | 2019年 / 53卷 / 09期
关键词：
resistive memory; non-stoichiometric; numerical simulation;
D O I：
10.1134/S1063782619090252
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The current-voltage characteristics of a resistive-memory structure based on non-stoichiometric tantalum oxides is numerically simulated. The results of pulsed studies of structures with different shapes of the conductive filament, such as a truncated cone with different generatrix inclination angles, are presented. It is shown how the shape and total volume of the conductive filament affects the current amplitude and the number of pulses necessary for complete filament breaking and restoration.
引用
收藏
页码：1246 / 1248
页数：3
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