Deposition of Polytetrafluoroethylene Film Assisted by Synchrotron Radiation Irradiation

A novel process was developed for fabricating a polytetrafluoroethylene (PTFE) thin film using synchrotron radiation (SR). First, a PTFE substrate was exposed to high-energy X-rays (2-8 keV) at room temperature. Afterwards, the PTFE substrate (target) was heated under atmospheric pressure and fragments desorbed from the surface deposited on a glass substrate to produce a film with a thickness of above 10 mu m. The characterization of the chemical structure of the deposited film was carried out using X-ray diffraction (XRD). The results indicated that the crystalline structure of the film became closer to those of the PTFE substrate upon an increase in the X-ray irradiation of the sample. The fabrication process of this PTFE thin film could be applied to various fields because surface modification of the substrate can be easily carried out.