Temperature Dependence of Electron and Hole Impact Ionization Coefficients in GaN

被引：17

作者：

Cao, Lina ^{[1
]}

Zhu, Zhongtao ^{[1
]}

Harden, Galen ^{[1
]}

Ye, Hansheng ^{[1
]}

Wang, Jingshan ^{[2
]}

Hoffman, Anthony ^{[1
]}

Fay, Patrick J. ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[2] Micron Technol Inc, Boise, ID 83707 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 03期

关键词：

Impact ionization; Gallium nitride; Photoconductivity; Charge carrier processes; Temperature measurement; P-i-n diodes; Temperature dependence; GaN; impact ionization coefficients; non-punch through p-n diodes; temperature dependence; N-JUNCTION DIODES; BREAKDOWN VOLTAGE; LIFETIME; ENERGY;

D O I：

10.1109/TED.2021.3054355

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature dependence of the electron and hole impact ionization coefficients in GaN has been investigated experimentally. Two types of p-i-n diodes grown on bulk GaN substrates have been fabricated and characterized, and the impact ionization coefficients for both electrons and holes have been extracted using the photomultiplication method. Both the electron and hole impact ionization coefficients decrease as the temperature increases. The Okuto-Crowell model was used to describe the temperature dependence of the electron and hole impact ionization coefficients. Based on the measured impact ionization coefficients, the temperature dependence of the breakdown voltage of GaN non-punch through p-n diodes can be predicted; good agreement with experimentally reported results is obtained.

引用

页码：1228 / 1234

页数：7

共 50 条

[21] ELECTRON-TEMPERATURE AND IONIZATION DEGREE DEPENDENCE OF ELECTRON-TRANSPORT COEFFICIENTS IN MONATOMIC GASES
ERWIN, DA
KUNC, JA
PHYSICS OF FLUIDS, 1985, 28 (11) : 3349 - 3355
[22] ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN GAAS-ALXGA1-XAS SUPERLATTICES
JUANG, FY
DAS, U
NASHIMOTO, Y
BHATTACHARYA, PK
APPLIED PHYSICS LETTERS, 1985, 47 (09) : 972 - 974
[23] ELECTRON-HOLE AVALANCHES WITH CONSTANT IONIZATION COEFFICIENTS
HOLWAY, LH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) : 991 - 993
[24] Impact ionization coefficients and critical electric field in GaN
Maeda, Takuya
Narita, Tetsuo
Yamada, Shinji
Kachi, Tetsu
Kimoto, Tsunenobu
Horita, Masahiro
Suda, Jun
JOURNAL OF APPLIED PHYSICS, 2021, 129 (18)
[25] Temperature dependence of electron impact ionization in In0.53Ga0.47As
Tan, CH
Rees, GJ
Houston, PA
Ng, JS
Ng, WK
David, JPR
APPLIED PHYSICS LETTERS, 2004, 84 (13) : 2322 - 2324
[26] TEMPERATURE-DEPENDENCE OF THE ELECTRON-IMPACT IONIZATION COEFFICIENT IN SILICON
ERSHOV, M
RYZHII, V
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (02) : 138 - 142
[27] Temperature dependence of impact ionization in AlGaN-GaN heterostructure field effect transistors
Dyakonova, N
Dickens, A
Shur, MS
Gaska, R
Yang, JW
APPLIED PHYSICS LETTERS, 1998, 72 (20) : 2562 - 2564
[28] Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes
Loh, W. S.
David, J. P. R.
Ng, B. K.
Soloviev, S. I.
Sandvik, P. M.
Ng, J. S.
Johnson, C. M.
SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 311 - 314
[29] ELECTRON-HOLE AVALANCHES WITH CONSTANT IONIZATION COEFFICIENTS - REPLY
HOLWAY, LH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (12) : 1978 - 1978
[30] ELECTRON AND HOLE IMPACT IONIZATION RATES IN GAAS
STILLMAN, GE
WOLFE, CM
ROSSI, JA
FOYT, AG
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (12) : 1177 - 1178

← 1 2 3 4 5 →