Sensing using nanostructured metal oxide thin films

被引:0
|
作者
Kiriakidis, G. [1 ]
Dovinos, D. [1 ]
Suchea, M. [1 ]
机构
[1] Fdn Res & Technol Hellas, Inst Elect Struct & Laser, POB 1527, Iraklion 71110, Crete, Greece
来源
NANOMATERIAL SYNTHESIS AND INTEGRATION FOR SENSORS, ELECTRONICS, PHOTONICS, AND ELECTRO-OPTICS | 2006年 / 6370卷
关键词
nanostructures; thin films; ozone sensing; gas sensors; zinc oxide; indium oxide;
D O I
10.1117/12.685369
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Metal oxides gas sensing properties particularly for In2O3 and ZnO nanostructures and nanostructured thin films are reviewed. Fabrication methods for these most commonly used metal oxides are presented, followed by a study on how growth techniques lead to nanostructures and nanostructured polycrystalline films with surface features of nanometer scale for film thickness bellow 1 mu m. The study continues with a discussion on how, a broad range of morphological parameters, affect the thin film response to various gases. After an overview, the study focus on thin films prepared by reactive dc magnetron sputtering and pulsed laser deposition in different growth conditions. In2O3 and ZnO thin films prepared for ozone sensing exhibit resistivity changes of five to eight orders of magnitude at room temperature after exposure to UV light and subsequent ozone treatment. Structural properties, i.e., crystallinity and microstructure investigated by X-ray diffraction (XRD) and Atomic Force Microscopy (AFM) are studied. The nanostructure and nanostructured surfaces are highly controlled by the deposition parameters, which, control the transport properties, and thus the sensing characteristics as measured by conductometric techniques. Analyses on the sensing response of nanostructures and nanostructured In2O3 and ZnO films for different gases are presented. Experiments on Surface Acoustic Wave (SAW) devices based on In2O3 and ZnO thin films fabricated on LiNbO3 substrates indicate the capability of achieving sensing levels in the low ppb range.
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页数:12
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