Effect of Ar+ irradiation on the behaviour of carbon nanotube transistor

被引：3
|
作者：
Woo, Yun Sung
Osvath, Z.
Vertesy, G.
Biro, L. P.
Roth, Siegmar
机构：
[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany
[2] Res Inst Tech Phys & Mat Sci, Budapest, Hungary
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2006年 / 243卷 / 13期
关键词：
D O I：
10.1002/pssb.200669143
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The characteristics of carbon nanotube field effect transistor are investigated after the whole device is irradiated with Ar+ ions. The resistance become much higher due to the electron scattering at vacancies produced by Ar+ irradiation. In addition, the subthreshold slop, S, (dV(G)/d(log I-D)) increases and the Schottky barrier height decreases after the irradiation, which imply the interface states generated within the band gap of the semiconducting single walled carbon nanotube. Therefore, we suggest a way that makes a transparent contact for electron transport by manipulating the vacancy formation at the interface between nanotube and metal leads. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：3390 / 3393
页数：4
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