Studies of liquid-phase deposition-oxide/InP structure by liquid-phase deposition

被引：1

作者：

Huang, CJ ^{[1
]}

机构：

[1] So Taiwan Univ Technol, Dept Elect Engn, Tainan 70101, Taiwan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2002年 / 31卷 / 12期

关键词：

LPD; oxide/InP; MOS capacitor;

D O I：

10.1007/s11664-002-0113-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon-dioxide (SiO2) growth on an indium-phosphide (InP) substrate by use of room-temperature (similar to30degreesC) liquid-phase deposition (LPD) is demonstrated. The produced LPD-SiO2 is of good quality and reliability because of the suppression of interdiffusion by use of relatively low temperatures. Because LPD is difficult without residual OH on the substrate, an InP surface rich in hydroxyls (In-OH) is created by pretreating the wafer substrate in a (29% NH4OH:H2O2 = 1:1) solution. The LPD-SiO2/InP is used to fabricate a metal-oxide semiconductor (MOS) capacitor with a device area of 1.12 X 10(-4) cm(2), yielding a leakage-current density of 8.1 X 10(-8) A/cm(2) at 3 MV/cm. A mechanism for the LPD deposition Of SiO2 on InP is also presented.

引用

页码：1309 / 1315

页数：7

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