Quantum well thermoelectric devices

被引：0
|
作者：
Ghamaty, S. [1 ]
Elsner, N. B. [1 ]
机构：
[1] Hi Z Technol Inc, San Diego, CA 92126 USA
来源：
Advances in Electronic Packaging 2005, Pts A-C | 2005年
关键词：
thermoelectric; quantum well; high efficiency; energy harvesting; power supply;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Fabrication development of high efficiency quantum well (QW) thermoelectric continues with the P-type B4C/B9C and N-type Si/SiGe films. Si/SiC is being developed to replace Si/SiGe for higher temperature operation. Both isothermal and gradient life testing are underway. One couple has achieved 700 hours at T-H of 300 degrees C and T-C of 50 degrees C with no degradation. Emphasis is now shifting towards couple and module design and fabrication. Preliminary design calculations regarding the development of actual quantum well modules will be presented for both power prediction and cooling applications. These modules can be used in future energy conversion system as well as air conditioning system designs.
引用
收藏
页码：2129 / 2134
页数：6
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