Hydrazine-free chemical bath deposition of WSe2 thin films and bi-layers for photovoltaic applications

被引：3
|
作者：
Guerrero, G. A. [1 ]
Rodriguez, A. G. [1 ]
Moreno-Garcia, H. [1 ]
机构：
[1] UASLP, CIACYT, Alvaro Obregon 64, San Luis Potosi 78000, Slp, Mexico
来源：
MATERIALS RESEARCH EXPRESS | 2019年 / 6卷 / 10期
关键词：
WSe2; bilayer; chemical bath deposition; diode; hydrazine-free; SINGLE-LAYER; WS2; FILMS; MOS2; TRANSITION; CONVERSION; PHONONS; GROWTH;
D O I：
10.1088/2053-1591/ab0efe
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the photovoltaic performance of a diode based on a p-type tungsten diselenide (WSe2) active region. The device is formed by WSe2 and cadmium sulfide (CdS) layers, both obtained via chemical bath deposition. A novel hydrazine-free chemical formulation allows deposition of WSe2 on glass and flexible Hastelloy substrates. Characterization of WSe2 via Raman spectroscopy shows four bands at 189, 244, 293, and 588 cm(-1). The strongest band at 293 cm(-1) is assigned to the interlayer interaction mode of the WSe2 layers. The photoluminescent characterization of Hastelloy/CdS/WSe2 samples exhibits two excitonic transitions at 1.7860 and 1.7899 eV. The current density-voltage (J-V) measurements of the CdS/WSe2 structure show a photovoltaic response with V-OC = 180 mV, J(SC) = 0.07 mA cm(-2), and FF = 0.22.
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页数：9
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