Thin films deposition in RF generated plasma by reactive pulsed laser ablation

被引：19
|
作者：
Giardini, A [1 ]
Marotta, V [1 ]
Morone, A [1 ]
Orlando, S [1 ]
Parisi, GP [1 ]
机构：
[1] CNR, IMS, Tito, PZ, Italy
来源：
APPLIED SURFACE SCIENCE | 2002年 / 197卷
关键词：
reactive pulsed laser deposition; RF plasma; oxides; thin films;
D O I：
10.1016/S0169-4332(02)00395-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Metal oxide thin films have been deposited on Si(1 0 0) substrates by reactive pulsed laser ablation of metallic target-titanium, tungsten-in the presence of a 13.56 MHz radio frequency (RF) plasma, 10 Pa static atmosphere of O-2, using a doubled frequency Nd:YAG laser. The gaseous species were collected on Si(1 0 0) substrates positioned in front of the target on a heatable holder, up to. 1000 K. The deposited thin films were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The comparison between conventional pulsed laser deposition (PLD) and the RF plasma-assisted PLD showed the influence of the plasma on the surface roughness, and a better adhesion to the substrates by the plasma-aided thin films. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：338 / 342
页数：5
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