Room-temperature infrared photoluminescence in GaN doped with various impurities

被引：4

作者：

Gaubas, E. ^{[1
]}

Ceponis, T. ^{[1
]}

Deveikis, L. ^{[1
]}

Dobrovolskas, D. ^{[1
]}

Rumbauskas, V. ^{[1
]}

Viliunas, M. ^{[1
]}

机构：

[1] Vilnius Univ, Inst Photon & Nanotechnol, Sauletekio Ave 3, LT-10257 Vilnius, Lithuania

来源：

OPTICAL MATERIALS | 2019年 / 94卷

关键词：

Carbon; Magnesium; Manganese and iron doped GaN; Photo-ionization spectroscopy; Photoluminescence spectroscopy; Room-temperature infrared-luminescence; Free-standing ammono-thermal and hydride vapour-phase epitaxy grown GaN; LUMINESCENCE; EMISSION; DEFECTS; RECOMBINATION; SPECTROSCOPY; CARBON;

D O I：

10.1016/j.optmat.2019.05.054

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The steady-state infrared-photoluminescence spectra (IR-PL) emitted from about 400 pm thick, free-standing GaN wafers, grown by the ammono-thermal and hydride vapour-phase epitaxy GaN, and containing carbon, magnesium, manganese and iron doping have been examined. The room-temperature IR-PL spectra are correlated with pulsed-photo-ionization spectra using van Roosbroeck-Schockley approach for spectrum conversion. It has been revealed that iron and carbon dopants appear as the most efficient impurities for the room temperature of infra-red emission from GaN grown using different technologies.

引用

页码：266 / 271

页数：6

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