Room-temperature infrared photoluminescence in GaN doped with various impurities

被引：4
|
作者：
Gaubas, E. [1 ]
Ceponis, T. [1 ]
Deveikis, L. [1 ]
Dobrovolskas, D. [1 ]
Rumbauskas, V. [1 ]
Viliunas, M. [1 ]
机构：
[1] Vilnius Univ, Inst Photon & Nanotechnol, Sauletekio Ave 3, LT-10257 Vilnius, Lithuania
来源：
OPTICAL MATERIALS | 2019年 / 94卷
关键词：
Carbon; Magnesium; Manganese and iron doped GaN; Photo-ionization spectroscopy; Photoluminescence spectroscopy; Room-temperature infrared-luminescence; Free-standing ammono-thermal and hydride vapour-phase epitaxy grown GaN; LUMINESCENCE; EMISSION; DEFECTS; RECOMBINATION; SPECTROSCOPY; CARBON;
D O I：
10.1016/j.optmat.2019.05.054
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The steady-state infrared-photoluminescence spectra (IR-PL) emitted from about 400 pm thick, free-standing GaN wafers, grown by the ammono-thermal and hydride vapour-phase epitaxy GaN, and containing carbon, magnesium, manganese and iron doping have been examined. The room-temperature IR-PL spectra are correlated with pulsed-photo-ionization spectra using van Roosbroeck-Schockley approach for spectrum conversion. It has been revealed that iron and carbon dopants appear as the most efficient impurities for the room temperature of infra-red emission from GaN grown using different technologies.
引用
收藏
页码：266 / 271
页数：6
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