Surface morphology and luminescence characterization of β-FeSi2 thin films prepared by pulsed laser deposition

被引:11
|
作者
Hossain, M. Zakir [1 ]
Mimura, Tomohiro [1 ]
Miura, Noboru [1 ]
Uekusa, Shin-ichiro [1 ]
机构
[1] Meiji Univ, Sch Sci & Technol, Dept Elect & Bioinformat, Tama Ku, Kanagawa 2148571, Japan
关键词
beta-FeSi2; Droplet; Pulsed laser deposition; Photoluminescence; SEMICONDUCTING FESI2; GROWTH; PHOTOLUMINESCENCE; ABLATION;
D O I
10.1016/j.apsusc.2009.05.072
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
beta-FeSi2 thin films were prepared on Si (1 1 1) substrates by pulsed laser deposition (PLD) with a sintering FeSi2 target and an electrolytic Fe target. The thin films without micron-size droplets were prepared using the electrolytic Fe target; however, the surface without droplets was remarkably rougher using the Fe target than using the FeSi2 target. After deposition at 600 degrees C and then annealing at 900 degrees C for 20 h, XRD indicated that the thin film prepared using the Fe target had a poly-axis-orientation, but that prepared using the FeSi2 target had a one-axis-orientation. The PL spectra of the thin films prepared using the FeSi2 and Fe targets at a growth temperature of 600 degrees C and subsequently annealed at 900 degrees C for 20 h had A-, B- and C-bands. Moreover, it was found that the main peak at 0.808 eV (A-band) in the PL spectrum of the thin films prepared using the FeSi2 target was the intrinsic luminescence of beta-FeSi2 from the dependence of PL peak energy on temperature and excitation power density. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:1227 / 1231
页数:5
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