Etch Characteristics of ZrO2 Thin Films in High Density Plasma

被引：1
|
作者：
Woo, Jong-Chang [1 ]
Kim, Gwan-Ha [1 ]
Kim, Dong-Pyo [1 ]
Um, Doo-Seung [1 ]
Kim, Chang-Il [1 ]
机构：
[1] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 08期
关键词：
GATE; STABILITY; MECHANISM; SURFACES; RATIO;
D O I：
10.1143/JJAP.48.08HD03
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this work, we investigated the etching characteristics of ZrO2 thin film and the selectivity of ZrO2 thin film to Si in the HBr/CF4 high density plasma (HDP) system. The maximum etch rate of 70.8 nm/min for ZrO2 thin film was obtained at HBr (75%)/CF4 (25%) gas mixing ratio. At the same time, the etch rate was measured as functions of the etching parameters such as HDP source power, bias power and temperature. The angle-resolved X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism of ZrO2 for the CF4-containing plasmas. (C) 2009 The Japan Society of Applied Physics
引用
收藏
页码：08HD031 / 08HD035
页数：5
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