A wideband 27-dBm CMOS T/R switch using stacking architecture, high substrate isolation and RF floated body

被引：0

作者：

Chu, Chun-Hsueh ^{[1
]}

Lin, Yih-Hsia ^{[2
]}

Chang, Da-Chiang ^{[3
]}

Gong, Jeng ^{[1
]}

Juang, Ying-Zong ^{[3
]}

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu, Taiwan

[2] Ming Chuan Univ, Dept Elect Engn, Taoyuan Cty, Taiwan

[3] Natl Appl Res Labs, Natl Chip Implementat Ctr, Hsinchu, Taiwan

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 2009年 / 96卷 / 9-10期

关键词：

floated body; RF CMOS; substrate isolation; stacking architecture; T/R switch; transmit/receive switch; 2.4-GHZ; VOLTAGE; VCO;

D O I：

10.1080/00207210902894753

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents comprehensive methods for the design of a wideband CMOS transmit/receive (T/R) switch. Techniques such as RF floated body to extend the bandwidth and decrease the insertion loss (IL), and stacking architecture with high substrate isolation to enhance the power-handling capability, are used for the design of a T/R switch on a standard 0.18-mu m triple-well process. The measured performance of the T/R switch demonstrates the effectiveness of the methods presented in this article such that IL less than 1.28 dB, isolation higher than 24 dB, and input 1 dB compression point of 27 dBm can be achieved from 2 to 5.8 GHz.

引用

页码：989 / 1003

页数：15

共 26 条

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[2] DESIGN OF CMOS T/R SWITCH USING HIGH-SUBSTRATE ISOLATION AND RF FLOATED BODY FOR 1.9-GHz APPLICATIONS
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[3] A 31.3-dBm bulk CMOS T/R switch using stacked transistors with sub-design-rule channel length in floated p-wells
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