Integration of GaN HEMTs onto Silicon CMOS by Micro Transfer Printing

被引：0

作者：

Lerner, Ralf ^{[1
]}

Eisenbrandt, Stefan ^{[1
]}

Bower, Christopher ^{[2
]}

Bonafede, Salvatore ^{[2
]}

Fecioru, Alin ^{[2
]}

Reiner, Richard ^{[3
]}

Waltereit, Patrick ^{[3
]}

机构：

[1] X FAB Semicond Foundries AG, Erfurt, Germany

[2] X Celeprint Ltd, Cork, Ireland

[3] Fraunhofer Inst Appl Phys, Freiburg, Germany

来源：

2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2016年

关键词：

heterogeneous integration; micro Transfer Printing; GaN on CMOS; TRANSISTORS; ADHESION;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Integration of GaN high voltage transistors into Silicon CMOS could combine superior electrical parameters of GaN HEMTs and the huge logic functionality of Silicon CMOS. Several issues of a monolithic integration of GaN devices into CMOS like material mismatch and thermal budgets can be overcome by heterogeneous integration by micro Transfer Printing. Results of first printing experiments with small GaN on Si HEMTs are presented.

引用

页码：451 / 454

页数：4

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