Study on Exchange-Biased Perpendicular Magnetic Tunnel Junction Based on Pd/Co Multilayers

被引：8
|
作者：
Lim, Dongwon [1 ]
Kim, Kisu [1 ]
Kim, Sungdong [2 ]
Jeung, Won Young [3 ]
Lee, Seong-Rae [1 ]
机构：
[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
[2] Seoul Natl Univ Technol, Sch Mech Design & Automat Engn, Seoul 139743, South Korea
[3] Korea Inst Sci & Technol, Div Engn & Mat Sci, Seoul 136791, South Korea
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2009年 / 45卷 / 06期
关键词：
Exchange biased; Pd/Co; perpendicular MTJ; ANISOTROPY;
D O I：
10.1109/TMAG.2009.2018590
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated top and bottom exchange biased perpendicularly magnetized magnetic tunnel junctions (pMTJs) with IrMn and the effects of the multilayer structure on the magnetoresistance and perpendicular exchange bias. The TMR ratio of the top exchange biased (TEB)-pMTJ was significantly deteriorated compared with that of the pseudo-pMTJ, due to the high junction resistance and the in-plane anisotropy induced in the Co/IrMn interface. The TMR ratio and perpendicular exchange bias were improved in the bottom exchange biased (BEB)-pMTJ as compared with those of the TEB-pMTJ. Perpendicularly magnetized buffer layers, such as (Pd/Co)(n), should be used to induce perpendicular exchange coupling with antiferromagnets such as IrMn in BEB-pMTJs.
引用
收藏
页码：2407 / 2409
页数：3
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