A novel vertical tunneling based Ge-source TFET with enhanced DC and RF characteristics for prospect low power applications

In this paper, we propose a novel germanium source based dual metal gate tunneling field effect transistor (VGeDMG). Design of device effectively suppresses lateral tunneling current component and facilitates dominance of vertical tunneling components which results in a substantially improved subthreshold slope. The dual gate in the design of the device gives the flexibility to control and improve the ON-current, OFF current and threshold voltage of the device significantly. In addition to the digital figure of merits, analog and RF performance of the proposed device is calculated and comparison with silicon source dual metal gate (conventional) TFET (SiDMG) and silicon source dual metal gate vertical TFET (VSiDMG) shows that the proposed device outperformed both the devices. The design fulfills the high-performance ON-state current of 1.20 mA, low standby power OFF-state current nearly of 3.63 fA, and SS 26 mV/decade indicating that the proposed TFET follows the ITRS roadmap for low standby power switch performance.