Optimization of Program and Erase Characteristics of Two Bit Flash Memory P-Channel Cell Structure using TCAD

被引：0

作者：

Hayashi, Hirokazu ^{[1
]}

Axelrad, Valery ^{[2
]}

Mochizuki, Marie ^{[1
]}

Hayashi, Takahisa ^{[1
]}

Maruyama, Tetsuhiro ^{[1
]}

Suzuki, Kazuya ^{[1
]}

Nagatomo, Yoshiki ^{[1
]}

机构：

[1] LAPIS Semicond Co Ltd, Device Technol Dev Div, Kouhoku Ku, Yokohama, Kanagawa 2228575, Japan

[2] SEQUOIA Design Syst Inc, Woodside, CA 94062 USA

来源：

2014 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2014年

关键词：

Flash Memory; SONOS; Two-Bit; P-Channel; TCAD;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the optimization of the two bit flash memory P-channel cell structure using efficient 2D write and erase model. Our proposed cell structure stores charge at either Source and/or Drain sides of the gate in an SiN film and is based on method of programming by DAHE and erasing by FN tunneling. It is found that expansion of cell window and the improvement of erase characteristic depend on the optimization of the gate-film overlap under gate of the SiN film.

引用

页码：169 / 172

页数：4

共 38 条

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