Design Considerations for 60 GHz CMOS Power Amplifiers

被引：0

作者：

He, Ying ^{[1
]}

Zhao, Dixian ^{[1
]}

Li, Lianming ^{[1
]}

Reynaert, Patrick ^{[1
]}

机构：

[1] Katholieke Univ Leuven, ESAT MICAS, Kasteelpk Arenberg 10, B-3001 Leuven, Belgium

来源：

2010 ASIA-PACIFIC MICROWAVE CONFERENCE | 2010年

关键词：

millimeter wave (mm-wave); CMOS; power amplifier; power combining; 60; GHz;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes design considerations for millimeter-wave CMOS power amplifiers (PA). Solutions are presented from device level to circuit level and demonstrated by a measured 60 GHz PA prototype in 65 nm bulk CMOS technology. The proposed PA achieves a peak output power of 14 dBm with a peak power-added efficiency (PAE) of 7.2%. The small signal gain is 10.2 dB and 1-dB compression output power is 10.8 dBm. The transformer-based passives employed in the design enable a compact layout with an active area of 0.3 mm(2). The PA consumes a quiescent current of 143 mA from a 1.6 V supply voltage.

引用

页码：1613 / 1616

页数：4

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