Development of Non-Volatile Tunnel-FET Memory as a Synaptic Device for Low-Power Spiking Neural Networks

被引：1
|
作者：
Kino, Hisashi [1 ]
Fukushima, Takafumi [2 ,3 ]
Tanaka, Tetsu [2 ,3 ]
机构：
[1] Tohoku Univ, Frontier Res Inst Interdisciplinary Sci FRIS, Sendai, Miyagi 9808579, Japan
[2] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan
[3] Tohoku Univ, Grad Sch Biomed Engn, Sendai, Miyagi 9808579, Japan
来源：
2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020) | 2020年
关键词：
SNN; Tunnel FET; MONOS; STDP; PLASTICITY;
D O I：
10.1109/edtm47692.2020.9118027
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Spiking neural network (SNN) has attracted much attention as next-generation neural networks. To realize SNN, the spike-timing-dependent plasticity (STDP) is one of the critical characteristics. In this study, we demonstrated the STDP of a biological synapse with non-volatile tunnel-field-effect transistor (FET) memory. Tunnel FET is a promising candidate to reduce the power consumption owing to the steep subthreshold characteristics. Therefore, non-volatile tunnel-FET memory we proposed has the possibility to realize low-power SNN. This paper reported the current-voltage characteristics, the memory window, and the STDP characteristics of the nonvolatile tunnel-FET memory.
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页数：3
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