Spin transport through a 1D Mott-Hubbard insulator of finite length

被引:2
|
作者
Ponomarenko, V. V. [1 ]
机构
[1] Univ Minho, Ctr Phys, P-4710057 Braga, Portugal
关键词
CHARGE; INJECTION; NOISE; MODEL;
D O I
10.1209/0295-5075/105/17008
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study low-energy spin and charge transport through a 1D Mott-Hubbard insulator of finite length L attached to Fermi liquid reservoirs, which, in the presence of spin accumulation, are characterized by different electrochemical potentials for electrons of opposite spin polarizations. At temperatures less than T-L = v(c)/L (v(c): charge velocity in the wire) and under the assumption that the Hubbard gap 2M is large enough, M > T-L, we calculate the average currents (charge and spin) and their zero-frequency correlators. The average spin (charge) current depends only on the difference (sum) of the spin-dependent voltages 2V(s) (2V(c)) and even a weak electron backscattering of low rate Gamma(s) << T-L leads to the spin current suppression v at vertical bar V-s vertical bar smaller than Gamma = const x root TLM exp{-2M/T-L} + Gamma(s). The spin current recovers its free mode behavior at spin voltage or temperature larger than Gamma. Suppression of the spin-charge correlator suggesting the appearance of spin-charge separation needs both vertical bar V-s, c vertical bar to be larger than G. In the absence of the average charge current at V-c = 0 its shot noise is proportional to the average spin backscattered current defined by V-s and can be used to measure the spin accumulation in the reservoirs. The relation of these results to Kondo dot transport in the Toulouse limit is also clarified. Copyright (C) EPLA, 2014
引用
收藏
页数:6
相关论文
共 50 条
  • [21] Metal-insulator transition in Mott-Hubbard system FeSi
    Sluchanko, N
    Glushkov, V
    Demishev, S
    Semeno, A
    Weckhuysen, L
    Moshchalkov, V
    Menovsky, A
    ACTA PHYSICA POLONICA B, 2003, 34 (02): : 787 - 790
  • [22] Mott-Hubbard metal-insulator transition at noninteger filling
    Byczuk, K
    Hofstetter, W
    Vollhardt, D
    PHYSICAL REVIEW B, 2004, 69 (04):
  • [23] MOTT-HUBBARD METAL-INSULATOR-TRANSITION IN NONBIPARTITE LATTICES
    KRISHNAMURTHY, HR
    JAYAPRAKASH, C
    SARKER, S
    WENZEL, W
    PHYSICAL REVIEW LETTERS, 1990, 64 (08) : 950 - 953
  • [24] Spin-vibronic superexchange in Mott-Hubbard fullerides
    Chibotaru, LF
    PHYSICAL REVIEW LETTERS, 2005, 94 (18)
  • [25] Photoemission of a Doped Mott Insulator: Spectral Weight Transfer and a Qualitative Mott-Hubbard Description
    Sing, M.
    Glawion, S.
    Schlachter, M.
    Scholz, M. R.
    Goss, K.
    Heidler, J.
    Berner, G.
    Claessen, R.
    PHYSICAL REVIEW LETTERS, 2011, 106 (05)
  • [26] SPIN-ORBITAL MODELS AND D-D EXCITONS IN DOPED MOTT-HUBBARD INSULATORS
    OLES, AM
    ZAANEN, J
    ACTA PHYSICA POLONICA B, 1993, 24 (04): : 825 - 843
  • [27] Spectroscopic fingerprints of a surface Mott-Hubbard insulator: the case of SiC(0001)
    Santoro, G
    Scandolo, S
    Tosatti, E
    SURFACE SCIENCE, 2000, 454 (01) : 534 - 538
  • [28] Scaling at the Mott-Hubbard metal-insulator transition in yttrium hydride
    Hoekstra, AFT
    Roy, AS
    Rosenbaum, TF
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (09) : 1405 - 1413
  • [29] A simple metal-insulator criterion for the doped Mott-Hubbard materials
    Gavrichkov, Vladimir A.
    SOLID STATE COMMUNICATIONS, 2015, 208 : 11 - 14
  • [30] Particle-hole symmetry and the effect of disorder on the Mott-Hubbard insulator
    Denteneer, PJH
    Scalettar, RT
    Trivedi, N
    PHYSICAL REVIEW LETTERS, 2001, 87 (14) : 146401/1 - 146401/4