Thermal processing of strained InGaAs/GaAs quantum well heterostructures bonded to Si via an epitaxial lift-off technique

被引：6
|
作者：
Rammohan, K
Rich, DH
MacDougal, MH
Dapkus, PD
机构：
[1] UNIV SO CALIF,DEPT MAT SCI & ENGN,PHOTON MAT & DEVICES LAB,LOS ANGELES,CA 90089
[2] UNIV SO CALIF,CTR PHOTON TECHNOL,DEPT ELECT ENGN ELECTROPHYS,LOS ANGELES,CA 90089
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 12期
关键词：
D O I：
10.1063/1.118627
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the effects of thermal cycling on the optical properties of In0.2Ga0.8As/GaAs single quantum well films bonded to Si(001) via the epitaxial lift-off technique, The optical and structural quality of the bonded films were monitored using cathodoluminescence (CL) imaging and spectroscopy. The films were stable through the temperature range (500-700 degrees C) used in normal InxGa1-xAs device processing. However, annealing at temperatures greater than similar to 700 degrees C resulted in layer intermixing accompanied by a blue-shift in the CL peak energy. The shifts in the CL peak energy were modeled by considering In-Ga interdiffusion at the interface and solving the Schrodinger equation using appropriate band profiles for this region. (C) 1997 American Institute of Physics.
引用
收藏
页码：1599 / 1601
页数：3
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