Narrow-gap semiconducting silicides: the band structure

被引：8
|
作者：
Filonov, AB
Migas, DB
Shaposhnikov, VL
Borisenko, VE
Heinrich, A
机构：
[1] Belarusian State Univ Informat & Radioelect, Minsk 220027, BELARUS
[2] Inst Solid State & Mat Res, D-01069 Dresden, Germany
来源：
MICROELECTRONIC ENGINEERING | 2000年 / 50卷 / 1-4期
关键词：
silicide; band structure; energy gap;
D O I：
10.1016/S0167-9317(99)00289-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electronic property simulation of the narrow-gap semiconducting rhenium and ruthenium silicides has been performed by the linear muffin-tin orbital method (LMTO) within the local density approximation. ReSi1.75 was found to have an indirect gap value of 0.16 eV. The first direct transition with appreciable oscillator strength at 0.30 eV is predicted. Ru2Si3 is revealed to be a direct gap semiconductor with an energy gap of 0.41 eV, while the isostructural Ru2Ge3 has a competitive indirect-direct character of the band gap of about 0.31 eV. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：249 / 255
页数：7
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