Residual stress measurements of 4H-SiC crystals using x-ray diffraction

被引：4

作者：

Nakabayashi, M. ^{[1
]}

Fujimoto, T. ^{[1
]}

Tsuge, H. ^{[1
]}

Kojima, K. ^{[2
]}

Abe, K. ^{[2
]}

Shimomura, K. ^{[2
]}

机构：

[1] Nippon Steel & Sumitomo Met Corp, Adv Technol Res Labs, 20-1 Shintomi, Chiba 2938511, Japan

[2] SIC Wafer Co, Nippon Steel & Sumikin Mat Corp, Saitama 3691201, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

Residual stress; Thermal distribution; X-ray diffraction; Lattice parameter; GROWTH; PLANE; PVT;

D O I：

10.4028/www.scientific.net/MSF.778-780.453

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The room temperature residual stress of 4H-SiC wafers has been investigated using high resolution X-ray diffraction (HRXRD). A large strain was observed for the circumferential direction of wafers, more than ten times larger than those measured along the principal plane direction and the radial direction. Optimizing the lateral temperature distribution in growing crystals leads to reduction of residual stress of wafers with high crystal quality.

引用

页码：453 / +

页数：2

共 50 条

[41] Comparison of Residual Stress Measurement Techniques and Implementation Using X-Ray Diffraction
Belassel, M.
Pineault, J.
Caratanasov, N.
Brauss, M.
RESIDUAL STRESSES 2016: ICRS-10, 2017, 2 : 43 - 48
[42] Volumetric Measurement of Residual Stress Using High Energy X-Ray Diffraction
Whitesell, R.
McKenna, A.
Wendt, S.
Gray, J.
42ND ANNUAL REVIEW OF PROGRESS IN QUANTITATIVE NONDESTRUCTIVE EVALUATION: INCORPORATING THE 6TH EUROPEAN-AMERICAN WORKSHOP ON RELIABILITY OF NDE, 2016, 1706
[43] Residual stress measurement with focused acoustic waves and direct comparison with X-ray diffraction stress measurements
Sathish, S
Moran, TJ
Martin, RW
Reibel, R
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2005, 399 (1-2): : 84 - 91
[44] X-ray absorption and photoemission spectroscopy of 3C-and 4H-SiC
Tallarida, M.
Schmeisser, D.
Zheng, F.
Himpsel, F. J.
SURFACE SCIENCE, 2006, 600 (18) : 3879 - 3883
[45] High-resolution x-ray topography of dislocations in 4H-SiC epilayers
Kamata I.
Tsuchida H.
Vetter W.M.
Dudley M.
Journal of Materials Research, 2007, 22 (4) : 845 - 849
[46] X-ray and electron response of 4H-SiC vertical interdigitated Schottky photodiodes
Lees, J. E.
Barnett, A. M.
Bassford, D. J.
Mazzillo, M.
JOURNAL OF INSTRUMENTATION, 2012, 7
[47] High-resolution x-ray topography of dislocations in 4H-SiC epilayers
Kamata, Isaho
Tsuchida, Hidekazu
Vetter, William M.
Dudley, Michael
JOURNAL OF MATERIALS RESEARCH, 2007, 22 (04) : 845 - 849
[48] High-resolution X-ray topography of dislocations in 4H-SiC epilayers
Kamata, Isaho
Tsuchida, Hidekazu
Vetter, William M.
Dudley, Michael
Silicon Carbide 2006 - Materials, Processing and Devices, 2006, 911 : 175 - 180
[49] Evaluation of Residual Stress by X-Ray Diffraction and Correlative Stress Modelling
Kumar, Sandeep
Crivoi, Alexandru
Tan, Ming Jen
Tai, Anna
Marinescu, Iulian
RESIDUAL STRESSES 2016: ICRS-10, 2017, 2 : 211 - 216
[50] SOURCES OF ERROR IN X-RAY MEASUREMENTS OF RESIDUAL STRESS
CULLITY, BD
JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1915 - &

← 1 2 3 4 5 →