Residual stress measurements of 4H-SiC crystals using x-ray diffraction

被引：4

作者：

Nakabayashi, M. ^{[1
]}

Fujimoto, T. ^{[1
]}

Tsuge, H. ^{[1
]}

Kojima, K. ^{[2
]}

Abe, K. ^{[2
]}

Shimomura, K. ^{[2
]}

机构：

[1] Nippon Steel & Sumitomo Met Corp, Adv Technol Res Labs, 20-1 Shintomi, Chiba 2938511, Japan

[2] SIC Wafer Co, Nippon Steel & Sumikin Mat Corp, Saitama 3691201, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

Residual stress; Thermal distribution; X-ray diffraction; Lattice parameter; GROWTH; PLANE; PVT;

D O I：

10.4028/www.scientific.net/MSF.778-780.453

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The room temperature residual stress of 4H-SiC wafers has been investigated using high resolution X-ray diffraction (HRXRD). A large strain was observed for the circumferential direction of wafers, more than ten times larger than those measured along the principal plane direction and the radial direction. Optimizing the lateral temperature distribution in growing crystals leads to reduction of residual stress of wafers with high crystal quality.

引用

页码：453 / +

页数：2

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