Rare-Earth-Ion-Doped Channel Waveguide Lasers on Silicon

被引：16

作者：

Pollnau, Markus ^{[1
]}

机构：

[1] KTH Royal Inst Technol, Sch Informat & Commun Technol, Dept Mat & Nano Phys, S-10044 Stockholm, Sweden

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2015年 / 21卷 / 01期

关键词：

Amorphous materials; CW lasers; dielectric waveguides; distributed Bragg reflector lasers; distributed feedback lasers; integrated optics; optical amplifiers; planar waveguides; rare earth compounds; solid lasers; HIGHLY EFFICIENT; UP-CONVERSION; THIN-FILMS; MU-M; OPTICAL AMPLIFIERS; SINGLE-MODE; CONJUGATED POLYMERS; INTEGRATED-OPTICS; NARROW-LINEWIDTH; DOUBLE TUNGSTATE;

D O I：

10.1109/JSTQE.2014.2351811

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews the recent developments in rare-earth-ion-doped channel waveguide lasers. Optical gain in rare-earth-ion-doped waveguides has been increased by two orders of magnitude to similar to 1000 dB/cm and waveguide lasers with extremely high slope efficiencies and output powers exceeding the Watt level have been demonstrated. Of particular interest in integrated optics is the recent integration of rare-earth-ion-doped channel waveguide lasers in amorphous materials directly deposited on a silicon substrate. Remarkable performance with respect to slope efficiency, output power, and laser linewidth has been achieved.

引用

页码：414 / 425

页数：12

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