Magnetoresistance of 3d transition metal single-doped and co-doped epitaxial ZnO thin films

被引：4

作者：

Ji, Gen-Hua ^{[1
]}

Gu, Zheng-Bin ^{[1
]}

Lu, Ming-Hui ^{[1
]}

Wu, Di ^{[1
]}

Zhang, Shan-Tao ^{[1
]}

Zhu, Yong-Yuan ^{[1
]}

Zhu, Shi-Ning ^{[1
]}

Chen, Yan-Feng ^{[1
]}

Pan, X. Q. ^{[2
]}

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China

[2] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

来源：

PHYSICA B-CONDENSED MATTER | 2009年 / 404卷 / 8-11期

关键词：

Magnetoresistance; TM-doped ZnO; s-d spin-splitting; Magnetic polarons; BOUND MAGNETIC POLARON; SEMICONDUCTORS; CONDUCTIVITY; FLUCTUATIONS; MODEL;

D O I：

10.1016/j.physb.2008.11.127

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Magnetoresistance (MR) of transition metal (TM)-doped and co-doped ZnO films prepared by a magnetron sputtering system has been discussed. For single-doped film, the values of H-max (the field at which MR shows its maximum) increase as temperature increases. At a certain temperature, the values of H-max increase from Mn-. Fe- to Co-doped films due to their different magnetic moments. For (Mn, Fe), (Mn, Co)-co-doped ZnO films, the MR behaviors show striking similarity as Mn-doped ZnO film. These results are interpreted in terms of the s-d spin-splitting mechanism. Large negative MR in high field is attributed to the formation of magnetic polarons (MPs). The temperature dependence of resistivity agrees well with the variable range hopping (VRH) mechanism of MPs. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1112 / 1115

页数：4

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