Production and annealing of the paramagnetic defects in as-grown and oxygen doped floating zone silicon irradiated with high fluence 3.5 MeV and 27 MeV electrons

The production and thermal stability of the irradiation paramagnetic point defects (IPPDs) in the as-grown, standard float-zone silicon (STFZ) and oxygen doped float-zone silicon (DOFZ) irradiated at room temperature with high fluence 3.5 MeV (1 x 10(17) cm(-2)) low energy and 27 MeV (2 x 10(16) cm(-2)) high energy electrons were investigated by Electron Spin Resonance (ESR). The nature and concentration of the IPPDs identified in the as-irradiated and isochronally annealed up to 300 degrees C samples by ESR measurements under intense above the gap 1.06 mu m in-situ laser illumination, were found to depend on oxygen concentration and electrons energy. While irradiation of STFZ with electrons produced as main IPPDs, besides divacancies, larger tetravacancy and pentavacancy cluster defects, irradiation of DOFZ resulted mainly in divacancies, vacancy-oxygen and interstitial oxygen-carbon impurity pairs. The observed variation in the nature of the main resulting IPPDs with the concentration of incorporated oxygen is explained by differences in the dominant defects production mechanisms. Thus in STFZ with lower oxygen concentration (1 x 10 16 cm(-3)) the dominant production mechanisms are the direct defects formation from a chain of neighboring vacancies by a cascade of secondary recoils across the path of the high energy irradiating particle and the divacancies diffusion and trapping/aggregation. Meanwhile, in DOFZ with larger oxygen content (1.2 x 10(17) cm(-3)) the primary vacancy and interstitial trapping by the oxygen and carbon impurities is the dominant defect production mechanism. Variations in the concentration and nature of the IPPDs observed during isochronal annealing are discussed in terms of defects thermal activated diffusion and recombination processes.